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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4688 DESCRIPTION With TO-3PML package Complement to type 2SA1803 APPLICATIONS Power amplifier applications Recommend for 40W high fidelity audio frequency amplifier output stage PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-3PML) and symbol Emitter DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25ae CONDITIONS Open emitter Open base Open collector VALUE 80 80 5 6 12 0.6 55 150 -55~150 ae ae UNIT V V V A A A W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=50mA; IB=0 IC=5A;IB=0.5 A IC=3A ; VCE=5V VCB=80V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=3A ; VCE=5V IC=1A ; VCE=5V IE=0; VCB=10V;f=1MHz 55 35 30 MIN 80 2SC4688 SYMBOL V(BR )CEO VCE(sat) VBE ICBO IEBO hFE-1 hFE-2 fT COB TYP. MAX UNIT V 2.0 1.5 5 5 160 |I |I V V A A MHz pF 105 hFE classifications R 55-110 O 80-160 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4688 Fig.2 Outline dimensions (unindicated tolerance:A 0.10 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4688 4 |
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